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When a sample of germanium and silicon having same impurity density are kept at room temperature then Resistivity of silicon will be higher than that of germanium, Why?
The answer is simple.
Consider the PN diode for Ge 0.3eV is the breakdown voltage and in the case of Si its 0.7eV since the impurities are added in the same amount the bond due to the other atoms of the Si makes it resistive compared to the Ge. that's all!
Consider the PN diode for Ge 0.3eV is the breakdown voltage and in the case of Si its 0.7eV since the impurities are added in the same amount the bond due to the other atoms of the Si makes it resistive compared to the Ge. that's all!