Electrical Engineering ⇒ Topic : Depletion Enhancement MOSFET
Depletion Enhancement MOSFET
Figure (a) shows a depletion enhancement MOSFET. The construction is similar to that of enhancement mode MOSFET. The main difference is that a lightly doped N-type channel has been introduced between the two heavily doped source and drain blocks. When drain is made positive with respect to the source, a drain current will flow even with zero gate potential. If the gate is made negative with respect to the source, a depletion region is formed and the channel resistance is increased. This device is known as depletion mode MOSFET
Figure (a) N-channel depletion and enhancement MOSFET.
The drain and transfer characteristics of a depletion enhancement MOSFET is shown in Figures 1 (a) and 1 (b), respectively.
Figure (1) Drain and transfer characteristics for depletion and enhancement NMOS.
The circuit symbol for N-channel and P-channel depletion enhancement MOS has been shown in Figures 2 (a) and 2(b), respectively
Figure (2) Symbol for N- and P-channel depletion MOS.
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